Analyzing Temperature and Quantum Effects on the Performance of CdTe and CIGS Thin-Film Solar Cells

Abstract

Thin-film solar cells based on Cadmium Telluride (CdTe) and Copper Indium Gallium Selenide (CIGS) are increasingly recognized for their low cost, flexibility and scalability compared to traditional silicon-based photovoltaics. However, their performance is strongly influenced by thermal fluctuations and quantum effects, which are often interdependent. This study combines Density Functional Theory (DFT) simulations, Finite Element Analysis (FEA) and experimental characterization to investigate the impact of these factors on high-efficiency CdTe and CIGS thin-film solar cells. The results demonstrate that increasing temperature (25–75°C) significantly reduces the bandgap, open-circuit voltage (Voc) and overall efficiency in both CdTe and CIGS devices. CdTe cells showed a 5% Voc reduction, while CIGS exhibited a smaller 3% drop. Interestingly, quantum tunnelling improved CdTe performance by ~1.2% at moderate temperatures (45–55°C), partially offsetting thermal losses. Spectroscopic analysis through Photoluminescence (PL) and Electroluminescence (EL) confirmed theoretical predictions, showing reduced recombination rates under optimal conditions. ANOVA analysis indicated statistically significant effects of both material type (F=12.63, p=0.002) and temperature (F=8.54, p=0.008), with strong interaction effects (F=10.12, p=0.004). These findings highlight the necessity of integrating both thermal management strategies and quantum-level design optimizations in advancing CdTe and CIGS thin-film solar cell performance, providing pathways for the next generation of cost-effective, high-efficiency photovoltaics.